Model-Independent Structure Determination of the InSb(111)2×2 Surface with Use of Synchrotron X-Ray Diffraction

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Abstract
We have measured accurate x-ray crystallographic data from the InSb(111)2×2 reconstructed surface using synchrotron radiation from the DORIS storage ring at DESY. We have analyzed these independently of all models and find a structure with seven atoms in the unit cell, implying that one site is unoccupied. The bonding configuration is reasonable for a III-V semiconductor surface, and is topologically identical (in projection) to the "vacancy-buckling" model proposed for the GaAs (111)2×2 surface. The differences between the InSb and GaAs structures are significant and reflect chemical trends in the periodic table.