On the Early Stages of Sublimation Growth of 4H-SiC Using 8° Off-Oriented Substrates
- 15 September 2003
- journal article
- Published by Trans Tech Publications, Ltd. in Materials Science Forum
- Vol. 433-436, 17-20
- https://doi.org/10.4028/www.scientific.net/msf.433-436.17
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- The Nucleation of Polytype Inclusions during the Sublimation Growth of 6H and 4H Silicon CarbideMaterials Science Forum, 2002
- Influence of excess silicon on the surface morphology and defect structure during the initial stages of SiC sublimation growthMaterials Science and Engineering: B, 1999
- Step-controlled epitaxial growth of SiC: High quality homoepitaxyMaterials Science and Engineering: R: Reports, 1997