Influence of excess silicon on the surface morphology and defect structure during the initial stages of SiC sublimation growth
- 30 July 1999
- journal article
- Published by Elsevier in Materials Science and Engineering: B
- Vol. 61-62, 86-88
- https://doi.org/10.1016/s0921-5107(98)00530-3
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- The Structural Evolution of Seed Surfaces During the Initial Stages of Physical Vapor Transport SiC GrowthMaterials Science Forum, 1998
- Improvement in the growth rate of cubic silicon carbide bulk single crystals grown by the sublimation methodJournal of Crystal Growth, 1997
- Growth of large SiC single crystalsJournal of Crystal Growth, 1993
- General principles of growing large-size single crystals of various silicon carbide polytypesJournal of Crystal Growth, 1981