Improvement in the growth rate of cubic silicon carbide bulk single crystals grown by the sublimation method
- 1 April 1997
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 174 (1-4) , 662-668
- https://doi.org/10.1016/s0022-0248(97)00038-9
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- Growth of bulk SiCMaterials Science and Engineering: B, 1995
- Bulk Growth of Single-Crystal Cubic Silicon Carbide by Vacuum Sublimation MethodJapanese Journal of Applied Physics, 1993
- Near-equilibrium growth of thick, high quality beta-SiC by sublimationApplied Physics Letters, 1993
- Single crystal growth of SiC substrate material for blue light emitting diodesIEEE Transactions on Electron Devices, 1983
- General principles of growing large-size single crystals of various silicon carbide polytypesJournal of Crystal Growth, 1981
- Study of silicon carbide epitaxial growth kinetics in the SiC-C systemJournal of Crystal Growth, 1979
- Epitaxial growth of silicon carbide layers by sublimation „sandwich method”︁ (I) growth kinetics in vacuumCrystal Research and Technology, 1979
- Investigation of growth processes of ingots of silicon carbide single crystalsJournal of Crystal Growth, 1978
- Thermodynamic Study of SiC Utilizing a Mass SpectrometerThe Journal of Chemical Physics, 1958
- Untersuchungen über die Flussspathsäure und deren merkwürdigsten VerbindungenAnnalen der Physik, 1824