Graded-gap a-SiC:H p-i-n thin-film light-emitting diodes
- 1 July 1992
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 13 (7) , 375-377
- https://doi.org/10.1109/55.192760
Abstract
To improve the performance of hydrogenated amorphous-silicon carbide (a-SiC:H) p-i-n thin-film light-emitting diodes (TFLEDs), a p-i-n TFLED with a graded p-i junction was proposed and fabricated. The electroluminescence (EL) intensity of the proposed TFLED was more than 100 times higher than that of the basic p-i-n TFLED and about 35 times lower than that of the conventional green LED, at the same injection current density. This significant improvement is attributed to the better interface property and enhancement of hole injection efficiency by using the graded-gap p-i junction.Keywords
This publication has 6 references indexed in Scilit:
- Visible a‐SiC:H P‐I‐N light emitting diodes with hot‐carrier tunneling injection layersJournal of the Chinese Institute of Engineers, 1992
- Amorphous-SiC thin-film p-i-n light-emitting diode using amorphous-SiN hot-carrier tunneling injection layersIEEE Transactions on Electron Devices, 1989
- Carrier injection mechanism in an a-SiC p-i-n junction thin-film LEDIEEE Transactions on Electron Devices, 1988
- Visible-Light Injection-Electroluminescent a-SiC/p-i-n DiodeJapanese Journal of Applied Physics, 1985
- Polarization effects in AC electroluminescence of a-Si1−xCx:HJournal of Non-Crystalline Solids, 1983
- Electroluminescence in hydrogenated amorphous silicon-carbon alloyApplied Physics Letters, 1983