Orientation dependence of electron–irradiation damage in zinc oxide
- 1 August 1979
- journal article
- other
- Published by Taylor & Francis in Philosophical Magazine A
- Vol. 40 (2) , 297-301
- https://doi.org/10.1080/01418617908243104
Abstract
The threshold voltage for zinc displacement in ZnO by electron irradiation lias been determined by high–voltage electron microscopy as a function of incident orientation from the [2110] to both the [0001] and [000T] directions. It is found that the threshold voltage is a minimum (∼700kV) in the [2110] direction and a maximum (∼1100kV) in the [0001] and [000T] directions without showing polarity effects. The result is interpreted in terms of the crystal structure of ZnO.Keywords
This publication has 2 references indexed in Scilit:
- Formation of dislocation loops on prismatic faults in zinc oxide in a high voltage electron microscopePhilosophical Magazine, 1977
- Crystallographic Polarity of ZnO CrystalsJournal of Applied Physics, 1963