Formation of dislocation loops on prismatic faults in zinc oxide in a high voltage electron microscope

Publisher Website
Google Scholar
Abstract
During 500 kV electron microscope observation of vapour-grown zinc oxide, dislocation loops nucleate at every—c side corner of prismatic stacking faults that intersect with basal faults, and grow on the prismatic faults. Diffraction contrast experiments show these loops to be of interstitial type with a Burgers vector of — 1/2c + (1 – 1/√3)a, where a is normal to the fault plane. From the threshold voltage of about 300 kV for the loops to be formed, it is concluded that the loop formation is due to migration of interstitial oxygen atoms that have undergone displacement by electron irradiation and of excess zinc atoms originally present interstitially in the crystal.

This publication has 8 references indexed in Scilit: