Hysteresis mechanism and reduction method in the bottom-contact pentacene thin-film transistors with cross-linked poly(vinyl alcohol) gate insulator
- 19 June 2006
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 88 (25)
- https://doi.org/10.1063/1.2213969
Abstract
The origin of the hysteresis phenomenon in bottom-contact pentacene organic thin-film transistors (OTFTs) with cross-linked poly(vinyl alcohol) (PVA) insulator is studied. From electrical measurements with various sweep ranges and two different sweep directions, the hysteresis effect is presumed to be caused by the electrons or holes that could be injected from the gate and trapped in the PVA bulk, rather than by the polarization or internally existing mobile ions. The assumption is confirmed by the clear reduction of hysteresis in OTFTs with a blocking oxide layer between gate and PVA insulator.Keywords
This publication has 13 references indexed in Scilit:
- Suppression of DC bias stress-induced degradation of organic field-effect transistors using postannealing effectsApplied Physics Letters, 2005
- Fabrication and characterization of solution-processed methanofullerene-based organic field-effect transistorsJournal of Applied Physics, 2005
- Low-voltage operation of a pentacene field-effect transistor with a polymer electrolyte gate dielectricApplied Physics Letters, 2005
- Nonvolatile organic field-effect transistor memory element with a polymeric gate electretApplied Physics Letters, 2004
- A study of the threshold voltage in pentacene organic field-effect transistorsApplied Physics Letters, 2003
- Light-induced bias stress reversal in polyfluorene thin-film transistorsJournal of Applied Physics, 2003
- Mobile ionic impurities in organic semiconductorsJournal of Applied Physics, 2003
- Bias stress in organic thin-film transistors and logic gatesApplied Physics Letters, 2001
- Bias-stress induced instability of organic thin film transistorsSynthetic Metals, 1999
- Field-effect transistors made from solution-processed organic semiconductorsSynthetic Metals, 1997