Exchange and correlation potential in silicon. II
- 28 May 1978
- journal article
- Published by IOP Publishing in Journal of Physics C: Solid State Physics
- Vol. 11 (10) , 2017-2027
- https://doi.org/10.1088/0022-3719/11/10/012
Abstract
For pt.I see ibid., vol.10, p.987 (1977). A previous calculation of the exchange and correlation energy in silicon is extended to the conduction band. The authors include the self-energy operator in the electron Hamiltonian to recalculate the band structure and compare this new band structure with that from a purely local pseudopotential. A simplified method of calculating the self-energy operator is suggested.Keywords
This publication has 14 references indexed in Scilit:
- Local field effects in exchange and correlation energies in semiconductorsJournal of Physics C: Solid State Physics, 1978
- Exchange and correlation potential in siliconJournal of Physics C: Solid State Physics, 1977
- Investigation of the second indirect transition of silicon by means of photoconductivity measurementsSolid State Communications, 1976
- Electronic structure of siliconPhysical Review B, 1974
- Direct observation of the E0 and E0 + Δ0 transitions in siliconSolid State Communications, 1972
- Ground-State Wave Function of Shallow Donors in Uniaxially Stressed Silicon: Piezohyperfine Constants Determined by Electron-Nuclear Double ResonancePhysical Review B, 1970
- Crystal Potential and Correlation for Energy Bands in Valence SemiconductorsPhysical Review B, 1966
- New Method for Calculating the One-Particle Green's Function with Application to the Electron-Gas ProblemPhysical Review B, 1965
- Direct Observation of Phonons in Silicon by Electric-Field-Modulated Optical AbsorptionPhysical Review Letters, 1965
- Electronic Spectra of Crystalline Germanium and SiliconPhysical Review B, 1964