Surface-free technology by laser annealing (SUFTLA) and its application to poly-Si TFT-LCDs on plastic film with integrated drivers
- 7 August 2002
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 49 (8) , 1353-1360
- https://doi.org/10.1109/ted.2002.801294
Abstract
In order to realize electronic devices on plastic film, new technology has been developed that enables the transfer of thin-film devices from an original substrate to another substrate by using laser irradiation. This technology was termed SUFTLA, which stands for surface-free technology by laser annealing. A polycrystalline-silicon thin film transistor (poly-Si TFT) back-plane for liquid crystal displays (LCDs) with integrated drivers was fabricated using a low-temperature process (below 425/spl deg/C) and could be successfully transferred from a glass or quartz substrate to plastic film using this technology. This technology enabled us to fabricate an all-plastic substrate TFT-LCD having a display area of 0.7 in measured diagonally and a pixel count of 428/spl times/238. In addition, the operation of the integrated drivers and the displayed image could be confirmed for the first time in the world.Keywords
This publication has 9 references indexed in Scilit:
- Surface free technology by laser annealing (SUFTLA)Published by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- Future trends for TFT integrated circuits on glass substratesPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- Low temperature CMOS self-aligned poly-Si TFTs and circuit scheme utilizing new ion doping and masking techniquePublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Low temperature poly-Si TFT-electrophoretic displays (TFT-EPDs) with four level gray scalePublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Polysilicon TFT on plasticsPublished by SPIE-Intl Soc Optical Eng ,2001
- 36.2: Low Temperature Poly‐Si TFTs on Plastic Substrate Using Surface Free Technology by Laser Ablation/Annealing (SUFTLA™)SID Symposium Digest of Technical Papers, 2000
- High Mobility Thin Film Transistors Fabricated on a Plastic Substrate at a Processing Temperature of 110°CJapanese Journal of Applied Physics, 2000
- Low-temperature polysilicon thin-film transistor driving with integrated driver for high-resolution light emitting polymer displayIEEE Transactions on Electron Devices, 1999
- Laser beam application to thin film transistorsApplied Surface Science, 1996