Thermally assisted hole tunneling at theinterface and the energy-band diagram of metal-nitride-oxide-semiconductor structures
- 15 January 1998
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 57 (4) , R2081-R2083
- https://doi.org/10.1103/physrevb.57.r2081
Abstract
Thermally assisted tunneling of holes at the interface was experimentally observed. The hole barrier of and the effective masses for the hole and electron tunneling into silicon nitride have been determined. A revised energy-band diagram of the metal-nitride-oxide-semiconductor structure is constructed.
Keywords
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