Design and characterization of thin film microcoolers
- 1 April 2001
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 89 (7) , 4059-4064
- https://doi.org/10.1063/1.1353810
Abstract
Thin film coolers can provide large cooling power densities compared to bulk thermoelectrics due to the close spacing of hot and cold junctions. Important parameters in the design of such coolers are investigated theoretically and experimentally. A three-dimensional (3D) finite element simulator (ANSYS) is used to model self-consistently thermal and electrical properties of a complete device structure. The dominant three-dimensional thermal and electrical spreading resistances acquired from the 3D simulation are also used in a one-dimensional model (MATLAB) to obtain faster, less rigorous results. Heat conduction, Joule heating, thermoelectric and thermionic cooling are included in these models as well as nonideal effects such as contact resistance, finite thermal resistance of the substrate and the heat sink, and heat generation in the wire bonds. Simulations exhibit good agreement with experimental results from InGaAsP-based thin film thermionic emission coolers which have demonstrated maximum cooling of 1.15 °C at room temperature. With the nonideal effects minimized, simulations predict that single stage thin film coolers can provide up to 20–30 °C degrees centigrade cooling with cooling power densities of several 1000 W/cm2.This publication has 14 references indexed in Scilit:
- Thermionic emission cooling in single barrier heterostructuresApplied Physics Letters, 1999
- Thermal conductivity and ballistic-phonon transport in the cross-plane direction of superlatticesPhysical Review B, 1998
- Enhanced Thermionic Emission Cooling in High Barrier Superlattice HeterostructuresMRS Proceedings, 1998
- Optical and structural properties of epitaxially lifted-off GaAs filmsJournal of Applied Physics, 1998
- Phonon superlattice transportPhysical Review B, 1997
- Heterostructure integrated thermionic coolersApplied Physics Letters, 1997
- A closed form solution of junction to substrate thermal resistance in semiconductor chipsIEEE Transactions on Components, Packaging, and Manufacturing Technology: Part A, 1996
- Understanding the sheet resistance parameter of alloyed ohmic contacts using a transmission line modelSolid-State Electronics, 1995
- Grafted InGaAsP light emitting diodes on glass channel waveguidesElectronics Letters, 1992
- Metallurgical and electrical properties of alloyed Ni/AuGe films on n-type GaAsSolid-State Electronics, 1975