Understanding the sheet resistance parameter of alloyed ohmic contacts using a transmission line model
- 30 April 1995
- journal article
- review article
- Published by Elsevier in Solid-State Electronics
- Vol. 38 (4) , 745-751
- https://doi.org/10.1016/0038-1101(94)00234-7
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- Properties of HgTe as a contact layer to n-Hg1-xCdxTeSemiconductor Science and Technology, 1993
- Comparison between analytical models and finite-difference simulations in transmission-line tap resistors and L-type cross-Kelvin resistorsIEEE Transactions on Electron Devices, 1990
- Characterization of alloyed AuGe/Ni/Au ohmic contacts to n-doped GaAs by measurement of transfer length and under the contact sheet resistanceIEEE Transactions on Electron Devices, 1989
- Characterization of reacted ohmic contacts to GaAsSolid-State Electronics, 1986
- Microstructure studies of AuNiGe Ohmic contacts to n-type GaAsJournal of Vacuum Science & Technology B, 1986
- Obtaining the specific contact resistance from transmission line model measurementsIEEE Electron Device Letters, 1982
- Ohmic contacts to Si-implanted InPSolid-State Electronics, 1981
- Alloying behavior of Ni/Au-Ge films on GaAsJournal of Applied Physics, 1980
- Models for contacts to planar devicesSolid-State Electronics, 1972