Characterization of alloyed AuGe/Ni/Au ohmic contacts to n-doped GaAs by measurement of transfer length and under the contact sheet resistance
- 1 July 1989
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 36 (7) , 1390-1393
- https://doi.org/10.1109/16.30948
Abstract
No abstract availableThis publication has 4 references indexed in Scilit:
- The effect of sheet resistance modifications underneath the contact on the extraction of the contact resistivity: application to the cross Kelvin resistorIEEE Transactions on Electron Devices, 1988
- A direct measurement of interfacial contact resistanceIEEE Electron Device Letters, 1982
- Obtaining the specific contact resistance from transmission line model measurementsIEEE Electron Device Letters, 1982
- Alloyed ohmic contacts to GaAsJournal of Vacuum Science and Technology, 1981