The effect of sheet resistance modifications underneath the contact on the extraction of the contact resistivity: application to the cross Kelvin resistor
- 1 March 1988
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 35 (3) , 386-388
- https://doi.org/10.1109/16.2466
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- Current crowding and misalignment effects as sources of error in contact resistivity measurements—Part II: Experimental results and computer simulation of self-aligned test structuresIEEE Transactions on Electron Devices, 1987
- Current crowding and misalignment effects as sources of error in contact resistivity measurements—Part I: Computer simulation of conventional CER and CKR structuresIEEE Transactions on Electron Devices, 1987
- Modeling and measurement of contact resistancesIEEE Transactions on Electron Devices, 1987
- A two-dimensional analytical model of the cross-bridge Kelvin resistorIEEE Electron Device Letters, 1986
- An accurate method to extract specific contact resistivity using cross-bridge Kelvin resistorsIEEE Electron Device Letters, 1985
- Contact resistivity of silicon/silicide structures formed by thin film reactionsThin Solid Films, 1985
- Analysis and scaling of Kelvin resistors for extraction of specific contact resistivityIEEE Electron Device Letters, 1985
- Lateral current crowding effects on contact resistance measurements in four terminal resistor test patternsIEEE Electron Device Letters, 1984
- A direct measurement of interfacial contact resistanceIEEE Electron Device Letters, 1982
- Obtaining the specific contact resistance from transmission line model measurementsIEEE Electron Device Letters, 1982