A two-dimensional analytical model of the cross-bridge Kelvin resistor
- 1 December 1986
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 7 (12) , 661-663
- https://doi.org/10.1109/edl.1986.26511
Abstract
This paper presents an analytical model which correctly explains the two-dimensional (2-D) current-crowding effects observed in the cross-bridge Kelvin resistor (CBKR). The model explains that the kelvin resistance measured by this device consists of two components, one due to specific resistivity and the other due to current flowing in the overlap region between the contact and the diffusion edges. The geometrical dependence of this second component is derived analytically and compared with two-dimensional numerical simulations. It becomes significant when specific contact resistivity\rho_{c} < R_{s} \times \delta^{2}, where δ is the amount of overlap between edge of the contact and the edge of the diffusion path, and Rsis the diffusion sheet resistance.Keywords
This publication has 2 references indexed in Scilit:
- Lateral current crowding effects on contact resistance measurements in four terminal resistor test patternsIEEE Electron Device Letters, 1984
- Direct measurements of interfacial contact resistance, end contact resistance, and interfacial contact layer uniformityIEEE Transactions on Electron Devices, 1983