Accumulation, dynamic annealing and thermal recovery of ion-beam-induced disorder in silicon carbide
- 1 April 2001
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
- Vol. 175-177, 26-30
- https://doi.org/10.1016/s0168-583x(00)00542-5
Abstract
No abstract availableKeywords
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