Irradiation effects and thermal annealing behavior in H2+-implanted 6H–SiC
- 2 May 2000
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
- Vol. 166-167, 374-378
- https://doi.org/10.1016/s0168-583x(99)01050-2
Abstract
No abstract availableKeywords
This publication has 15 references indexed in Scilit:
- Damage formation and recovery in C+-irradiated 6H–SiCNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1999
- Accumulation and recovery of irradiation damage in He+ implanted α-SiCJournal of Nuclear Materials, 1998
- Damage accumulation and annealing in 6H–SiC irradiated with Si+Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1998
- Structure and properties of ion-beam-modified (6H) silicon carbideMaterials Science and Engineering: A, 1998
- Ion-beam induced damage and annealing behaviour in SiCNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1998
- Amorphization and defect recombination in ion implanted silicon carbideJournal of Applied Physics, 1997
- The irradiation-induced crystalline-to-amorphous phase transition in α-SiCNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1996
- Silicon carbide: synthesis and processingNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1996
- Ion implantation effects in silicon carbideNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1993
- High-resolution electron microscopy study of electron-irradiation-induced crystalline-to-amorphous transition in ?-SiC single crystalsPhilosophical Magazine Part B, 1992