Ion implantation effects in silicon carbide
- 1 January 1993
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
- Vol. 80-81, 889-894
- https://doi.org/10.1016/0168-583x(93)90703-9
Abstract
No abstract availableThis publication has 14 references indexed in Scilit:
- The chemical state of iron ions implanted into silicon carbideNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1991
- The hardness and elastic modulus of chromium-implanted silicon carbideNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1990
- The structure of ion implanted ceramicsNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1990
- Ion implantation and annealing of crystalline oxides and ceramic materialsNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1988
- Ion implantation in β-SiC: Effect of channeling direction and critical energy for amorphizationJournal of Materials Research, 1988
- Damage accumulation in ceramics during ion implantationNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1986
- The reactivity of ion-implanted SiCMaterials Science and Engineering, 1985
- Structural alterations in SiC as a result of Cr+ and N+ implantationNuclear Instruments and Methods in Physics Research, 1983
- Photoluminescence of Radiation Defects in Ion-ImplantedSiCPhysical Review B, 1972
- Disorder produced in SiC by ion bombardmentRadiation Effects, 1971