The reactivity of ion-implanted SiC
- 31 March 1985
- journal article
- Published by Elsevier in Materials Science and Engineering
- Vol. 69 (2) , 391-395
- https://doi.org/10.1016/0025-5416(85)90338-6
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- Etching of chemically vapour-deposited amorphous Si3N4-C composites in HF solutionJournal of Materials Science, 1983
- Oxidation Kinetics of Hot‐Pressed and Sintered α‐SiCJournal of the American Ceramic Society, 1981
- The oxidation characteristics of nitrogen-implanted siliconRadiation Effects, 1980
- Dopant dependence of the oxidation rate of ion implanted siliconRadiation Effects, 1980
- Enhanced etching of ion-implanted silicon nitride in buffered hydrofluoric acidJournal of Vacuum Science and Technology, 1978
- Localized substrate heating during ion implantationJournal of Vacuum Science and Technology, 1978
- Effect of Alumina Content on the Oxidation of Hot‐Pressed Silicon CarbideJournal of the American Ceramic Society, 1975
- Depth distribution of energy deposition by ion bombardmentComputer Physics Communications, 1974