The irradiation-induced crystalline-to-amorphous phase transition in α-SiC
- 1 August 1996
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
- Vol. 116 (1-4) , 322-326
- https://doi.org/10.1016/0168-583x(96)00066-3
Abstract
No abstract availableKeywords
This publication has 19 references indexed in Scilit:
- The temperature dependence of ion-beam-induced amorphization in β-SiCNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1995
- High temperature ion implantation of silicon carbideNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1995
- Defect production and annealing in ion implanted silicon carbideMaterials Science and Engineering: B, 1995
- Ion implantation effects in silicon carbideNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1993
- High-resolution electron microscopy study of electron-irradiation-induced crystalline-to-amorphous transition in ?-SiC single crystalsPhilosophical Magazine Part B, 1992
- Electron-irradiation-induced crystalline-to-amorphous transition in ?-SiC single crystalsPhilosophical Magazine Part B, 1992
- Radiation-induced amorphization and swelling in ceramicsJournal of Nuclear Materials, 1991
- Electron-irradiation-induced crystalline to amorphous transition in α-Sic single crystalsPhilosophical Magazine Part B, 1990
- In situ ion irradiation /implantation studies in the HVEM-tandem facility at argonne national laboratoryNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1989
- Ion implantation in β-SiC: Effect of channeling direction and critical energy for amorphizationJournal of Materials Research, 1988