The temperature dependence of ion-beam-induced amorphization in β-SiC
- 1 December 1995
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
- Vol. 106 (1-4) , 298-302
- https://doi.org/10.1016/0168-583x(95)00722-9
Abstract
No abstract availableKeywords
This publication has 13 references indexed in Scilit:
- Effect of temperature and recoil-energy spectra on irradiation-induced amorphization in Ca2La8(SiO4)6O2Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1994
- The radiation-induced crystalline-to-amorphous transition in zirconJournal of Materials Research, 1994
- High-resolution electron microscopy study of electron-irradiation-induced crystalline-to-amorphous transition in ?-SiC single crystalsPhilosophical Magazine Part B, 1992
- Electron-irradiation-induced crystalline-to-amorphous transition in ?-SiC single crystalsPhilosophical Magazine Part B, 1992
- Energy dependence of electron damage and displacement threshold energy in 6H silicon carbideIEEE Transactions on Nuclear Science, 1991
- Radiation-induced amorphization and swelling in ceramicsJournal of Nuclear Materials, 1991
- Electron-irradiation-induced crystalline to amorphous transition in α-Sic single crystalsPhilosophical Magazine Part B, 1990
- In situ ion irradiation /implantation studies in the HVEM-tandem facility at argonne national laboratoryNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1989
- Ion implantation in β-SiC: Effect of channeling direction and critical energy for amorphizationJournal of Materials Research, 1988
- A model for the formation of amorphous Si by ion bombardmentRadiation Effects, 1970