Energy dependence of electron damage and displacement threshold energy in 6H silicon carbide
- 1 December 1991
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 38 (6) , 1111-1115
- https://doi.org/10.1109/23.124082
Abstract
No abstract availableThis publication has 12 references indexed in Scilit:
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