Lower plasma-induced damage in SiO2/Si at lower temperatures
- 15 October 1990
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 57 (16) , 1654-1656
- https://doi.org/10.1063/1.104133
Abstract
We found that the radiation damage induced in a SiO2/Si system during plasma processing depends strongly on the specimen temperature. The surfaces of the SiO2 have been exposed to a microwave plasma at different temperatures and the resultant damage has been evaluated by capacitance‐voltage (C‐V) measurements. The flatband voltage shift (ΔVFB) for the specimen exposed to the plasma at 126 K has been found to be only 1/3 of that at 300 K. In case of vacuum ultraviolet photon irradiation through a thin Al film, the ΔVFB for the irradiation at 126 K has been only 1/5 of that at 300 K. It is believed that this lower plasma‐induced damage at the lower temperature is due to the small mobility of hole in SiO2 at lower temperatures. Plasma etching at low temperature has the advantage of low damage generation in the SiO2/Si structures.Keywords
This publication has 14 references indexed in Scilit:
- Mechanisms of sputtering of Si in a Cl2 environment by ions with energies down to 75 eVJournal of Applied Physics, 1988
- Sputtering yield and radiation damage by neutral beam bombardmentJournal of Vacuum Science & Technology A, 1988
- The role of energetic ion bombardment in silicon-fluorine chemistryNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1987
- Annealing of Si damage caused by reactive ion etching in SF6 gas mixturesApplied Physics Letters, 1986
- Chemical sputtering of silicon by F+, Cl+, and Br+ ions: Reactive spot model for reactive ion etchingJournal of Vacuum Science & Technology B, 1986
- Radiation-Induced Interface-State Generation in MOS DevicesIEEE Transactions on Nuclear Science, 1986
- Near‐Surface Damage and Contamination after CF 4 / H 2 Reactive Ion Etching of SiJournal of the Electrochemical Society, 1985
- Relationship between x-ray-produced holes and interface states in metal-oxide-semiconductor capacitorsJournal of Applied Physics, 1983
- A Framework for Understanding Radiation-Induced Interface States in SiO2 MOS StructuresIEEE Transactions on Nuclear Science, 1980
- Radiation damage in silicon dioxide films exposed to reactive ion etchingJournal of Applied Physics, 1979