Constrictions in the stacking faults of dislocations in germanium
- 1 March 1977
- journal article
- research article
- Published by Taylor & Francis in Philosophical Magazine
- Vol. 35 (3) , 821-827
- https://doi.org/10.1080/14786437708236011
Abstract
Under suitable imaging conditions using the weak-beam method of electron microscopy, constrictions in the stacking faults of dislocations in Ge become clearly visible. After deformation at relatively low temperatures they occur at an average separation of 950 Å. In short segments they reduce the width of the stacking fault.Keywords
This publication has 11 references indexed in Scilit:
- Dissociation of near-screw dislocations in germanium and siliconPhilosophical Magazine, 1975
- Observations of constrictions on dissociated dislocation lines in copper alloysPhilosophical Magazine, 1974
- Low-temperature internal friction of deformed germanium and siliconPhysica Status Solidi (a), 1973
- Dissociated dislocations in GermaniumPhysica Status Solidi (a), 1973
- Extended dislocations in germaniumPhilosophical Magazine, 1973
- Internal friction in deformed germanium crystals at low temperaturesPhysica Status Solidi (a), 1972
- The dissociation of dislocations in siliconProceedings of the Royal Society of London. Series A. Mathematical and Physical Sciences, 1971
- The measurement of stacking-fault energies of pure face-centred cubic metalsPhilosophical Magazine, 1971
- Investigations of dislocation strain fields using weak beamsPhilosophical Magazine, 1969
- Theory of Dislocation Mobility in SemiconductorsPhysical Review B, 1963