Carrier density dependence of the ambipolar diffusion coefficient in GaAs n-i-p structures
- 15 September 1997
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 71 (11) , 1501-1503
- https://doi.org/10.1063/1.119948
Abstract
We report on investigations of the ambipolar diffusion coefficient in GaAs n-i-p structures in which the electron density in the n channel is varied. The ambipolar diffusion coefficient was determined by time-resolved diffusion experiments of the Shockley–Haynes type. The dependence of the ambipolar diffusion coefficient on the varying carrier density is in excellent agreement with the theory of ambipolar diffusion in n-i-p-i systems. In the investigated sample, the ambipolar diffusion coefficient reaches a maximum value of 16 300 cm2/s. Although the ambipolar diffusion constant declines with decreasing carrier density, it is in a wide range of the carrier density more than two orders of magnitude enhanced compared to bulk materials.Keywords
This publication has 5 references indexed in Scilit:
- Reverse biased photoconductive detectors and switches with separate absorption and detection areaApplied Physics Letters, 1995
- All-optical measurement of the giant ambipolar diffusion constant in a hetero-nipi reflection modulatorSemiconductor Science and Technology, 1993
- Diffusive electrical conduction in high-speed p-i-n photodetectorsApplied Physics Letters, 1992
- Giant ambipolar diffusion constant of n-i-p-i doping superlatticesPhysical Review Letters, 1991
- The Mobility and Life of Injected Holes and Electrons in GermaniumPhysical Review B, 1951