Direct LPE Growth of InP on (111)A Oriented In0.53Ga0.47As without Dissolution
- 1 April 1982
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 21 (4A) , L237
- https://doi.org/10.1143/jjap.21.l237
Abstract
Suitable LPE growth conditions needed to obtain (111)A oriented high-quality InP/In0.53Ga0.47As/InP double heterostructures were determined. These conditions were found by investigating the effects of the cooling rate, the degree of supercooling and the growth temperature on the dissolution of In0.53Ga0.47As in In–P solutions. The surface of InP grown on (111)A In0.53Ga0.47As was found to be smooth enough for use in optical devices.Keywords
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