n +-InP growth on InGaAs by liquid phase epitaxy
- 15 June 1981
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 38 (12) , 1003-1004
- https://doi.org/10.1063/1.92245
Abstract
High‐quality epitaxial growth of InP over InGaAs without dissolution has been achieved by using Sn‐rich, rather than the more conventional In‐rich, solutions. This technique, which produces n+‐InP, is directly applicable to growth of p‐i‐n and avalanche photodiode structures designed for operation in the 1.55‐μm wavelength region of minimum loss in optical fibers.Keywords
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