Lattice superdilation phenomena in doped GaAs
- 1 June 1976
- journal article
- conference paper
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 47 (6) , 2584-2587
- https://doi.org/10.1063/1.322977
Abstract
A lattice superdilation phenomenon in doped GaAs is reported. Measurements of lattice parameter on GaAs doped with tin and tellurium have revealed this effect, which is an exceptional rate of lattice expansion (about 14 times that predicted by simple substitution) which occurs when the doping exceeds a critical concentration of ∼3×1018 cm−3. Below this critical concentration simple substitution on arsenic sites appears to occur. Possible defect models which might explain this phenomenon are discussed.This publication has 12 references indexed in Scilit:
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