High-temperature cw operation of GaInAsP/InP lasers emitting at 1.5 μm
- 1 July 1980
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 37 (1) , 25-27
- https://doi.org/10.1063/1.91688
Abstract
Cw operation at temperatures up to 55 °C has been achieved for GaInAsP/InP double‐heterostructure lasers emitting at 1.5 μm which were grown without a GaInAsP buffer layer.Keywords
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