Zn-diffused, stripe-geometry, double-heterostructure GaInAsP/InP diode lasers
- 1 August 1979
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Quantum Electronics
- Vol. 15 (8) , 694-697
- https://doi.org/10.1109/jqe.1979.1070090
Abstract
Deep Zn diffusion from a ZnP2source has been used to fabricate stripe-geometry double-heterostructure GaInAsP/InP diode lasers with emission wavelengths in the1.2-1.3 \mum range. These devices exhibit good electrical and optical confinement. For sufficiently narrow stripe widths (<10 \mum), emission is usually single mode and linear. CW outputs up to ∼8 mW per facet have been observed. In initial life tests, two Zn-diffused lasers have operated CW at room temperature for over 5000 h without appreciable degradation.Keywords
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