GaInAsP/InP double-heterostructure lasers for fiber odtic communications

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Abstract
This paper reviews the performance of GaInAsP/InP double-heterostructure diode lasers prepared by liquid-phase epitaxy. These lasers have the advantage that exact lattice-matching between the GaIn-ASP active region and the InP substrate is possible for quaternary alloy compositions giving emission wavelengths over a range that includes 1.1–1.3 μm, the optimum region for optical communication systems utilizing fused silica fibers. Continuous operation at room temperature has been achieved in this region for proton-defined stripe (PDS), oxide-defined stripe (ODs), and junction-defined, buried-stripe (JDBS) lasers. The first three PDS devices to be life-tested have already logged over 6,000, 5,700, and 4,000 h, respectively, of cw operation at room temperature without any degradation.