Transmission electron microscopy of semi-insulating Ga As deformed at room temperature and under confining pressure
- 1 January 1985
- journal article
- Published by EDP Sciences in Journal de Physique Lettres
- Vol. 46 (21) , 1023-1030
- https://doi.org/10.1051/jphyslet:0198500460210102300
Abstract
Ga As single crystals have been deformed by compression at room temperature under a confining pressure of 600 MPa. Two competitive mechanisms of plastic deformation are proposed. The first mechanism is supported by the observation of mobile perfect (or slightly dissociated) α dislocations. The second mechanism involves less mobile widely dissociated β (or screw) dislocations. It is suggested that the large dissociation of these dislocations is due to the lower mobility of the 30° (β) partialsKeywords
This publication has 11 references indexed in Scilit:
- Anisotropic deformation behaviour of GaAsPhysica Status Solidi (a), 1984
- The structure of vitreous and liquid V2O5Philosophical Magazine Part B, 1984
- The plastic deformation of silicon between 300°C and 600°CPhilosophical Magazine A, 1981
- Prismatic Slip of A12O3 Single Crystals Below 1000°C in Compression Under Hydrostatic PressureJournal of the American Ceramic Society, 1981
- The dissociation of dislocations in GaAsPhilosophical Magazine A, 1978
- Asymmetrical behaviour of “60°” dislocation glide in indium antimonidePhysica Status Solidi (a), 1978
- Creep and dislocation velocities in gallium arsenidePhysica Status Solidi (a), 1978
- On the mobility of partial dislocations in siliconPhilosophical Magazine, 1977
- Diffraction from single and overlapping stacking faults in F.C.C. crystalsPhysica Status Solidi (a), 1976
- Electron Diffraction Contrast from Three Parallel Overlapping Stacking FaultsPhysica Status Solidi (b), 1968