The Effect of Self-Implantation on the Interdiffusion in Amorphous Si/Ge Multilayers
- 1 January 1986
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
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- Neutron scattering measurements of interdiffusion in amorphous Si/Ge multilayersJournal de Physique, 1986
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- Ion beam sputtering apparatus for fabrication of compositionally modulated materialsReview of Scientific Instruments, 1985
- Calorimetric studies of crystallization and relaxation of amorphous Si and Ge prepared by ion implantationJournal of Applied Physics, 1985
- DIFFUSIONPublished by Elsevier ,1985
- Structural model for amorphous silicon and germaniumJournal of Non-Crystalline Solids, 1971