Neutron scattering measurements of interdiffusion in amorphous Si/Ge multilayers
- 1 January 1986
- journal article
- Published by EDP Sciences in Journal de Physique
- Vol. 47 (10) , 1751-1756
- https://doi.org/10.1051/jphys:0198600470100175100
Abstract
Multilayered amorphous Si/amorphous Ge films with a periodicity of 80 to 100 Å have been obtained using UHV evaporation techniques. The interdiffusion coefficient D of this system was determined by measuring the intensity of the neutron (000) forward scattering satellites arising from the modulation, as a function of annealing temperature and time. The temperature dependence of D in the range 620-710 K is described by D = 6.34 x 10-3 exp (- 2.35 eV/kT ) cm2 s-1Keywords
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