Diffusion and precipitation in amorphous Si
- 1 March 1985
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 46 (5) , 478-480
- https://doi.org/10.1063/1.95563
Abstract
The diffusion and precipitation of several ion implanted impurities in amorphous Si have been observed at temperatures of 300–600 °C. Typical slow diffusers in crystalline Si, such as As, In, Sb, and Bi, show little or no diffusion at low concentrations. At high concentrations (>1 at. %), they diffuse rapidly with D≳10−15 cm2/s in the temperature range 500–600 °C. Typical fast diffusers in crystalline Si, such as Cu and Au, diffuse in amorphous Si with D>10−12 cm2/s at 400–600 °C. Precipitation has been observed for both the fast and slow diffusers in amorphous Si.Keywords
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