Thermal redistribution of indium in amorphous silicon layers
- 1 January 1982
- journal article
- Published by Taylor & Francis in Radiation Effects
- Vol. 67 (3) , 77-82
- https://doi.org/10.1080/01422448108226845
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- Near-surface regrowth rate effects in high-dose ion-implanted (100) siliconApplied Physics Letters, 1980
- Supersaturated solid solutions after solid phase epitaxial growth in Bi-implanted siliconApplied Physics Letters, 1980
- Incorporation of implanted In and Sb in silicon during amorphous layer regrowthJournal of Applied Physics, 1979
- The application of high-resolution Rutherford backscattering techniques to near-surface analysisNuclear Instruments and Methods, 1978
- Influence of 16O, 12C, 14N, and noble gases on the crystallization of amorphous Si layersJournal of Applied Physics, 1977
- Reordering of amorphous layers of Si implanted with 31P, 75As, and 11B ionsJournal of Applied Physics, 1977
- Regrowth behavior of ion-implanted amorphous layers on 〈111〉 siliconApplied Physics Letters, 1976
- Chaneling effect measurements of the recrystallization of amorphous Si layers on crystal SiPhysics Letters A, 1975
- Semiconductor PhysicsPublished by Elsevier ,1969
- Observation of ion bombardment damage in siliconPhilosophical Magazine, 1968