Laser Quenching of Amorphous Si from the Melt Containing Dopants
- 1 January 1983
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Influence of doping on the liquid-amorphous transition induced by picosecond laser irradiation of SiApplied Physics Letters, 1983
- Silicon Melt, Regrowth, and Amorphization Velocities During Pulsed Laser IrradiationPhysical Review Letters, 1983
- Transitions to Defective Crystal and the Amorphous State Induced in Elemental Si by Laser QuenchingPhysical Review Letters, 1982
- Ultrarapid crystal growth and impurity segregation in amorphous silicon annealed with short Q-switched laser pulsesApplied Physics Letters, 1982
- Picosecond laser-induced melting and resolidification morphology on SiApplied Physics Letters, 1979