Annealing encapsulants for InP II: Photoluminescence studies
- 13 August 1982
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 94 (2) , 161-170
- https://doi.org/10.1016/0040-6090(82)90508-9
Abstract
No abstract availableKeywords
This publication has 12 references indexed in Scilit:
- Photoluminescence studies of 4He- and 9Be-implanted semi-insulating InPJournal of Applied Physics, 1982
- Iron and Chromium Redistribution in Semi‐Insulating InPJournal of the Electrochemical Society, 1981
- Deep Impurity Levels in InP LEC CrystalsJapanese Journal of Applied Physics, 1981
- Heat Treatment of n-Type InP in Controlled Phosphorus VaporJapanese Journal of Applied Physics, 1980
- Study of Encapsulants for Annealing GaAsJournal of the Electrochemical Society, 1977
- Ion-implanted n- and p-type layers in InPApplied Physics Letters, 1977
- Incorporation of Si in Liquid Phase Epitaxial InP LayersJournal of the Electrochemical Society, 1976
- Phase Equilibria and Vapor Pressures of Pure Phosphorus and of the Indium/Phosphorus System and Their Implications Regarding Crystal Growth of InPJournal of the Electrochemical Society, 1974
- Indium PhosphideJournal of the Electrochemical Society, 1973
- Free and bound electron transitions to acceptors in indium phosphideSolid State Communications, 1972