Some studies on the instability in MOS devices due to water vapour contamination
- 1 September 1976
- journal article
- research article
- Published by Taylor & Francis in International Journal of Electronics
- Vol. 41 (3) , 273-283
- https://doi.org/10.1080/00207217608920635
Abstract
The capacitance-voltage technique has been employed to study the instability phenomenon in silicon dioxide films, intentionally contaminated with water vapour. The temperature, voltage and time dependence on initial drift and recovery waveform are reported. Variation of contamination level and study of ion migration kinetics have been used to propose a new qualitative model to explain the result. Non-bridging oxygen situated at the metal-oxide interface acts an attractive site for positive ions. When the system is exposed to water, a complex is formed, which dissociates the positively charged ions, causing the observed instability. The above phenomenon is observed only when a catalytic impurity is present on the oxide surface.Keywords
This publication has 16 references indexed in Scilit:
- Transport of sodium ions in silicon dioxide films using MOS structurePhysica Status Solidi (a), 1972
- Cation transport in SiO2Physica Status Solidi (a), 1972
- Photoinjection Studies of Charge Distributions in Oxides of MOS StructuresJournal of Applied Physics, 1971
- Ionic Contamination and Transport of Mobile Ions in MOS StructuresJournal of the Electrochemical Society, 1971
- Mobile Ion Transfer to SiO[sub 2] Films from EthanolJournal of the Electrochemical Society, 1971
- Dielectric relaxation in Si—SiO2—Cr structuresIEEE Transactions on Electron Devices, 1970
- Kinetics and mechanism of thermal oxidation of silicon with special emphasis on impurity effectsJournal of Physics and Chemistry of Solids, 1969
- Thermal Oxidation of Silicon: Growth Mechanism and Interface PropertiesPhysica Status Solidi (b), 1967
- ON THE ROLE OF SODIUM AND HYDROGEN IN THE Si–SiO2 SYSTEMApplied Physics Letters, 1966
- Dielectric relaxation in thermally grown SiO2filmsIEEE Transactions on Electron Devices, 1966