Band-offset determination of the CdTe/(Cd,Mn)Te interface

We report on photoluminescence excitation spectroscopy of CdTe/(Cd,Mn)Te separate confinement heterostructures. The Mn concentration and layers thicknesses are carefully chosen, so that transitions that are strongly dependent on the valence-band offset are observable. Comparison between theory and experiments gives a valence-band offset between CdTe and ${\mathrm{Cd}}_{1\mathrm{-}\mathrm{x}}$ ${\mathrm{Mn}}_{\mathrm{x}}$Te equal to 25% ± 7% of the total band-gap difference.