Ion-implanted MOS technology
- 1 January 1971
- journal article
- research article
- Published by Taylor & Francis in Radiation Effects
- Vol. 7 (1) , 45-57
- https://doi.org/10.1080/00337577108232563
Abstract
This paper discusses the current state of ion-implantation as applied to MOS technology. It is shown how impurity doping by ion-implantation is used to produce self-aligned MOS gate structures. The reduction in circuit capacitance gives the designer a choice of higher switching speed or lower power dissipation. The availability of a linear resistor of value 1–10 kω/□ allows many new circuit techniques to be applied to monolithic circuits. This paper discusses ion-implantation technology, device design, and circuit performance. A number of implanted circuits are shown. Finally, improvements to the present technology which are still in the R & D phase are described.Keywords
This publication has 3 references indexed in Scilit:
- Electron beam and ion beam fabricated microwave switchIEEE Transactions on Electron Devices, 1970
- MOS field effect transistors formed by gate masked ion implantationIEEE Transactions on Electron Devices, 1968
- Insulated gate field effect transistors fabricated using the gate as source-drain maskPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1966