Performance of 1-10-GHz traveling wave amplifiers in 0.18-μm CMOS
- 7 November 2002
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Microwave and Wireless Components Letters
- Vol. 12 (9) , 327-329
- https://doi.org/10.1109/lmwc.2002.803194
Abstract
The authors present two four-stage traveling-wave amplifiers (TWA) fabricated in a 0.18-/spl mu/m CMOS process. A TWA with an internal drain bias network achieved a gain of 5 dB out to 10 GHz, and another TWA without an on-chip bias network achieved a gain of 8 dB out to 10 GHz. These are the highest frequency CMOS TWAs known to the authors.Keywords
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