The effect of the incomplete return of minority carriers in a recombination lifetime measurement using a pulsed MOS capacitor
- 30 November 1979
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 22 (11) , 963-966
- https://doi.org/10.1016/0038-1101(79)90069-8
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Minority carrier recombination in MOS capacitors switched from inversion to accumulationSolid-State Electronics, 1977
- Measuring the lifetime of minority carriers in MIS structuresSolid-State Electronics, 1969
- Low-temperature hysteresis effects in metal-oxide-silicon capacitors caused by surface-state trappingIEEE Transactions on Electron Devices, 1968