Calculation of the Subband Structure of Inversion Layers in p‐InSb Bicrystals
- 1 June 1985
- journal article
- research article
- Published by Wiley in Physica Status Solidi (b)
- Vol. 129 (2) , K167-K171
- https://doi.org/10.1002/pssb.2221290260
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Shubnikov-de Haas effect of n-inversion layers in InSb grain boundariesSolid State Communications, 1984
- Quasi‐Classical Quantization for Potentials with an Infinite Surface Barrier. Subbands in Inversion LayersPhysica Status Solidi (b), 1983
- Carrier Density near the Semiconductor-Insulator Interface. Local Density Approximation for Non-Isotropic Effective MassPhysica Status Solidi (b), 1983
- Electric subbands in P-type germanium inversion layersSolid State Communications, 1983
- A Modified Local Density Approximation. Electron Density in Inversion LayersPhysica Status Solidi (b), 1982