Shubnikov-de Haas effect of n-inversion layers in InSb grain boundaries
- 31 December 1984
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 52 (10) , 843-845
- https://doi.org/10.1016/0038-1098(84)90253-9
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Electric subbands in P-type germanium inversion layersSolid State Communications, 1983
- Electronic properties of two-dimensional systemsReviews of Modern Physics, 1982
- Theory of Electronic Properties in N-Channel Inversion Layers on Narrow-Gap Semiconductors I. Subband Structure of InSbJournal of the Physics Society Japan, 1980
- Surface cyclotron resonance in InSbSolid State Communications, 1975
- Alpha and Beta Grain Boundaries in Indium AntimonideJournal of Applied Physics, 1962