Alpha and Beta Grain Boundaries in Indium Antimonide

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Abstract
Grain boundaries in indium antimonide with misfit angles of 6° have been prepared which, according to the dislocation model for grain boundaries, consist of rows of α or β dislocations. Current flow across these boundaries in n‐ and p‐type material has been studied. Alpha boundaries were found to present a barrier to current flow in n‐ and p‐type material, β boundaries only in p‐type material. This indicates for α dislocations donor behavior in p‐type material, acceptor behavior in n‐type material and for β‐dislocations donor characteristics. A theoretical model for the boundary states is proposed.

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