Striations on Si Trench Sidewalls Observed by Atomic Force Microscopy
- 1 November 1997
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 36 (11R) , 6722-6723
- https://doi.org/10.1143/jjap.36.6722
Abstract
Atomic force microscopy (AFM) measurements revealed many striations on the Si trench sidewalls fabricated by reactive ion etching (RIE). The trench sidewall surface was rougher when a resist with a rougher surface was employed as a mask, whereas it was smoother when a resist with a smoother surface was employed. This result strongly suggests that the roughness of the resist is one of the causes of the roughness of the trench sidewalls.Keywords
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