Exact evaluation of channel mobility for trench MOSFET using split C–V method
- 1 June 1997
- journal article
- Published by Elsevier in Applied Surface Science
- Vol. 117-118, 181-186
- https://doi.org/10.1016/s0169-4332(97)80075-x
Abstract
No abstract availableKeywords
This publication has 2 references indexed in Scilit:
- On the universality of inversion layer mobility in Si MOSFET's: Part I-effects of substrate impurity concentrationIEEE Transactions on Electron Devices, 1994
- Charge accumulation and mobility in thin dielectric MOS transistorsSolid-State Electronics, 1982