Simulation of the step coverage for chemical vapor deposited silicon dioxide
- 1 April 1992
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 71 (7) , 3532-3537
- https://doi.org/10.1063/1.350908
Abstract
A simulation procedure describing the low‐pressure chemical vapor deposition (LPCVD) of silicon dioxide on structured wafer surfaces is introduced. Deposition and step coverage of LPCVD films can be understood by adsorption and desorption of a deposition precursor. Experiments are evaluated to verify the simulation and to determine the sticking coefficient at different conditions of deposition.This publication has 11 references indexed in Scilit:
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